CBI BCV27T

CBI · Transistors (BJTs) · MPN BCV27T

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Specifications

Current - Collector Cutoff100nA
Vbe Saturation(VBE(sat))1.5V
Vbe On(VBE(on))-
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain4000;10000;20000
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 30V 500mA 300mW Surface Mount SOT-523

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