CBI BC859CW

CBI · Transistors (BJTs) · MPN BC859CW

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA

Technical details

30V 800 1 PNP PNP 100mA SOT-323 Single Bipolar Transistors RoHS

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