CBI BC857BV

CBI · Transistors (BJTs) · MPN BC857BV

No reviews yet — be the first to review CBI BC857BV.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain475
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150mW
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV;400mV

Technical details

45V 475 PNP 2 PNP 100mA SOT-563 Single Bipolar Transistors RoHS

Related Transistors (BJTs)