CBI BC849CW

CBI · Transistors (BJTs) · MPN BC849CW

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA

Technical details

Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 200mW Surface Mount SOT-323

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