CBI BC807-40W

CBI · Transistors (BJTs) · MPN BC807-40W

No reviews yet — be the first to review CBI BC807-40W.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain600
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 200mW Surface Mount SOT-323

Related Transistors (BJTs)