CBI B772S

CBI · Transistors (BJTs) · MPN B772S

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW;5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-65℃~+150℃

Technical details

30V 400 1 PNP PNP 3A SOT-23 Single Bipolar Transistors RoHS

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