CBI 2SD1007

CBI · Transistors (BJTs) · MPN 2SD1007

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)700mA
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 120V 0.7A 2W Surface Mount SOT-89

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