CBI 2SD1005

CBI · Transistors (BJTs) · MPN 2SD1005

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

80V 400 1 NPN NPN 1A SOT-89 Single Bipolar Transistors RoHS

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