CBI 2SB806

CBI · Transistors (BJTs) · MPN 2SB806

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)75MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain90
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation2W
ConfigurationStandalone
Number1 PNP
typePNP
Current - Collector(Ic)700mA
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor 120V 0.7A 75MHz 2W Surface Mount SOT-89-3L

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