CBI 2SA812

CBI · Transistors (BJTs) · MPN 2SA812

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

50V 200 1 PNP PNP 100mA SOT-23 Single Bipolar Transistors RoHS

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