CBI 2SA2018

CBI · Transistors (BJTs) · MPN 2SA2018

No reviews yet — be the first to review CBI 2SA2018.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain680
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

12V 680 1 PNP PNP 500mA SOT-523 Single Bipolar Transistors RoHS

Related Transistors (BJTs)