BORN SS8050W

BORN · Transistors (BJTs) · MPN SS8050W

No reviews yet — be the first to review BORN SS8050W.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 0.25W Surface Mount SOT-323

Related Transistors (BJTs)