BORN MMBTA42

BORN · Transistors (BJTs) · MPN MMBTA42

No reviews yet — be the first to review BORN MMBTA42.

Specifications

Current - Collector Cutoff250nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation350mW
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 300V 0.2A 50MHz 350mW Surface Mount SOT-23

Related Transistors (BJTs)