BORN MMBT5401D

BORN · Transistors (BJTs) · MPN MMBT5401D

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation200mW
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV

Technical details

150V 300 PNP 2 PNP 200mA SOT-23-6L Single Bipolar Transistors RoHS

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