BORN M8550

BORN · Transistors (BJTs) · MPN M8550

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 0.8A 150MHz 0.2W Surface Mount SOT-23

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