BORN KTD1304

BORN · Transistors (BJTs) · MPN KTD1304

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)650MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO3V
DC Current Gain60
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)4mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 4mA 650MHz 225mW Surface Mount SOT-23

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