baocheng MMBT5551

baocheng · Transistors (BJTs) · MPN MMBT5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV

Technical details

160V 300 600mA SOT-23 Single Bipolar Transistors RoHS

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