amsem UMH11N

amsem · Transistors (BJTs) · MPN UMH11N

No reviews yet — be the first to review amsem UMH11N.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-363

Related Transistors (BJTs)