amsem UMD9N

amsem · Transistors (BJTs) · MPN UMD9N

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,250uA
Input Resistor13kΩ
typeNPN+PNP
Resistor Ratio5.7
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 150mW Surface Mount SOT-363

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