amsem MMDT5451

amsem · Transistors (BJTs) · MPN MMDT5451

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation200mW
ConfigurationStandalone
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 160V 200mA 200mW Surface Mount SOT-363

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