amsem MMBT5551

amsem · Transistors (BJTs) · MPN MMBT5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 60V 600mA 300mW Surface Mount SOT-23

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